| PART |
Description |
Maker |
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| MRF286S MRF286 |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
|
Motorola, Inc
|
| MRF21060R3 MRF21060SR3 MRF21060 |
2170 MHz, 60 W, 28 V Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors
|
Freescale (Motorola)
Motorola, Inc
|
| NP36P06SLG |
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOSFET
|
NEC
|
| RFK35N10 RFK35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS, N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| MAPLST1900-030CF |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 30W, 26V
|
Tyco Electronics
|
| MRF1511T1 |
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
|
MOTOROLA[Motorola, Inc]
|
| MRF9060NR1 MRF9060NR109 |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
|
Freescale Semiconductor, Inc
|
| MRF5P21180HR6 |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
|
Freescale Semiconductor, Inc
|
